Ion Beam Assisted Sputter Deposition, PVD Thermal Evaporation System

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ION BEAM ASSISTED DEPOSITION

An ion source is used to enhance film density and quality by increasing the energy of the materials being deposited on a substrate or wafer.

ION BEAM DEPOSITION

Multiple high energy ion sources are used to sputter and densify target materials to create very uniform, very high quality films.

ION BEAM ETCHING

A high energy ion source is used to etch a substrate of wafer to provide a highly directional, anistropic etch.

MAGNETRON SPUTTERING

Basic sputtering processes are improved by way of a magnetron cathode that uses magnetic fields to confine process electrons and in so doing increase the energy of particles used to bombard the target.

PECVD

Plasma Enhanced Chemical Vapor Deposition deposits thin films through the chemical breakdown of a precursor gas.

PVD

(Physical Vapor Deposition) Coating method that involves physical processes such as high temperature vacuum evaporation by electron beam, resistive or ion beam sputter bombardment instead of a chemical reaction.

REACTIVE ION BEAM ETCH

Ion beam etch selectivity is enhanced through the injection of reactant gases that increase the etch rates on targeted materials.

SPUTTERING

A stream of energetic particles is used to physically remove material from a target and deposit it on a wafer or substrate.

THERMAL EVAPORATION

Material is evaporated from a thermal source and condensed on a substrate or wafer.