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ION BEAM ASSISTED DEPOSITION
An ion source is used to enhance film density and quality by increasing the energy of the materials being deposited on a substrate or wafer.
ION BEAM DEPOSITION
Multiple high energy ion sources are used to sputter and densify target materials to create very uniform, very high quality films.
ION BEAM ETCHING
A high energy ion source is used to etch a substrate of wafer to provide a highly directional, anistropic etch.
Basic sputtering processes are improved by way of a magnetron cathode that uses magnetic fields to confine process electrons and in so doing increase the energy of particles used to bombard the target.
Plasma Enhanced Chemical Vapor Deposition deposits thin films through the chemical breakdown of a precursor gas.
(Physical Vapor Deposition) Coating method that involves physical processes such as high temperature vacuum evaporation by electron beam, resistive or ion beam sputter bombardment instead of a chemical reaction.
REACTIVE ION BEAM ETCH
Ion beam etch selectivity is enhanced through the injection of reactant gases that increase the etch rates on targeted materials.
A stream of energetic particles is used to physically remove material from a target and deposit it on a wafer or substrate.
Material is evaporated from a thermal source and condensed on a substrate or wafer.
See how Denton turns barriers into breakthroughs. Sample our library of white papers and case studies.
- Choosing a Chamber
- Ion Bombardment Characteristics During Growth of Optical Films Using a Cold Cathode Ion Source
- Bipolar Pulsed DC Sputtering of Optical Films
- Ion-Assisted Deposition of E-Gun Evaporated ITO Films at Low Substrate Temperatures
- Stability and Repeatability of 2-Layer Anti-Reflection Coatings
- Thickness Distribution of Evaporated Films
- Dense Moisture Stable Titania and Silica Ion Assisted Deposited Films Deposited Using a Compact Cold Cathode Ion Source
- Measurement and Correlation of Ion Beam Current Density to Moisture Stability of Oxide Film Stacks Fabricated by Cold Cathode Ion Assisted Deposition
- Optimizing Source Location For Control of Thickness Uniformity
- Why Ion Assisted Deposition (IAD)?
- Characterization of a Plasma Ion Source and of Ion Assisted Deposited Optical Thin Films
- The Effects of Pumping Speed on the Operation of a Cold Cathode Ion Source
- Characterizing Optical Thin Films (I)
- Characterizing Optical Thin Films (II)
- PDF Instructions for Excel File Referenced in Paper
- Excel File
- Considerations and Examples for Determining Precision of Indirect Optical Monitoring
- Ion-assisted Deposition of Moisture Stable HfO2 Thin-films
- The Characterization of TiNi Shape-Memory Actuated Microvalves
- Optical Monitoring of Thin-films Using Spectroscopic Ellipsometry
- Spectroellipsometric Characterization of Plasma-deposited Au/SiO2 Nanocomposite Films
- Substrate and Morphology Effects on Photoemission From Core-Levels in Gold Clusters
- Design of Multi-Band Square Band Pass Filters
- Design and Development of Optical Coatings on Laser Bar Facets
- Plasma Deposition of Anti-reflective Coatings on Spherical Lenses
- Contributing Factors in Cathode Placement for Confocal Sputtering
Development of Titanium Nitride Fractal Coatings for Cardiac and Neural Electrostimulation Electrodes
Reproduced by permission of the Society of Vacuum Coaters