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Semiconductor devices continue to evolve, incorporating increasingly complex architectures, advanced packaging, and multiple materials within a single device. As these technologies become more sophisticated, failure analysis tools must provide precise, repeatable material removal while adapting to a wide range of applications.
In this month’s video blog, Denton Vacuum’s Vice President of Marketing and Technology, Dr. David Douglass, discusses how the Infinity FA Whole Chip Delayering System has been re-engineered to provide greater flexibility, improved reliability, and expanded configuration options for semiconductor failure analysis.
Precision Delayering for Advanced Semiconductor Devices
Whole-chip delayering requires more than fast material removal. The process must maintain planarity across mixed-material structures, minimize sample damage, and stop precisely at the layer of interest. The Infinity FA combines Kaufman-type broad ion beam etching with optional Secondary Ion Mass Spectrometry (SIMS) endpoint detection to support accurate, low-damage delayering of advanced semiconductor devices.
The Infinity FA platform now supports greater flexibility in system configuration. Multiple ion source options allow users to tailor the system to specific applications and performance requirements. A new direct current (DC) ion source provides a lower-cost configuration for applications that do not require the higher etch rates or Reactive Ion Beam Etching (RIBE) capabilities of the RFICP source.
Expanding Configuration Options for Failure Analysis
Another significant enhancement is the adoption of a standardized platform shared with Denton’s Infinity Ion Beam Etch (IBE) system. The common platform simplifies integration with other Denton equipment while improving reliability through use of semiconductor-grade components. It also provides a foundation for future expansion as additional capabilities become available.
The standardized architecture also enables direct integration with Denton’s Versa cluster platform, allowing the Infinity FA to become part of a fully integrated processing environment without breaking vacuum. This approach supports more efficient semiconductor manufacturing while creating opportunities for increased process automation.
These enhancements align with broader trends in semiconductor failure analysis. As device architectures continue to increase in complexity, the need for accurate, repeatable whole-chip delayering continues to grow. ASM International’s recent International Roadmap for Failure Analysis (IRFA) Solution Gaps report identified automated global IC delayering as an emerging requirement, reinforcing the importance of flexible platforms that combine precise endpoint control, low-damage material removal, and scalable system architectures.